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| ON Semiconductort High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications. PNP 2N5684 NPN 2N5686 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 -80 VOLTS 300 WATTS * High Current Capability - * * w IC Continuous = 50 Amperes. DC Current Gain - hFE = 15-60 @ IC = 25 Adc Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I II III I II II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5684 2N5686 80 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 50 15 Collector Current - Continuous Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 300 1.715 Watts W/_C _C TJ, Tstg -65 to + 200 CASE 197A-05 TO-204AE THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol JC Max Unit 0.584 _C/W (1) Indicates JEDEC Registered Data. 300 250 200 150 100 50 0 0 20 40 60 Figure 1. Power Derating 1 80 100 120 140 TEMPERATURE (C) 160 180 200 Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 11 Publication Order Number: 2N5684/D 2N5684 2N5686 t, TIME ( s) III I I I II III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II IIIIII IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Vdc Collector-Emitter Sustaining Voltage (Note 2) (IC = 0.2 Adc, IB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) VCEO(sus) ICEO ICEX 80 - mAdc mAdc - - - - - 1.0 2.0 10 2.0 5.0 Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO IEBO hFE mAdc mAdc - Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain (Note 2) (IC = 25 Adc, VCE = 2.0 Vdc) (IC = 50 Adc, VCE = 5.0 Vdc) ON CHARACTERISTICS 15 5.0 - - - - 60 - Collector-Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 10 Adc) VCE(sat) Vdc 1.0 5.0 2.0 2.0 - Base-Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) Base-Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) VBE(sat) VBE(on) fT Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2.0 - - MHz pF 2N5684 2N5686 Cob hfe 2000 1200 - Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. Note 2: Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. VCC RL +2.0 V 0 RB tr 20 ns -12 V 10 to 100 s DUTY CYCLE 2.0% +10 V 0 RB -12 V tr 20 ns 10 to 100 s VCC RL TO SCOPE tr 20 ns -30 V TO SCOPE tr 20 ns -30 V 15 1.0 0.7 0.5 0.3 0.2 tr td 0.1 0.07 0.05 0.03 0.02 TJ = 25C IC/IB = 10 VCC = 30 V 2N5684 (PNP) 2N5686 (NPN) VBB +4.0 V 0.01 0.5 0.7 1.0 DUTY CYCLE 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit http://onsemi.com 2 2N5684 2N5686 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE D = 0.5 0.2 P(pk) JC(t) = r(t) JC JC = 0.584C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 100 IC, COLLECTOR CURRENT (AMP) 50 20 10 dc 500 s 5.0 ms 1.0 ms 100 s 5.0 2.0 1.0 0.5 0.2 0.1 1.0 TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5684, 2N5686 2.0 3.0 20 30 50 70 100 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area 4.0 3.0 2.0 t, TIME ( s) ts 1.0 0.8 0.6 0.4 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 tf 2N5684 (PNP) 2N5686 (NPN) TJ = 25C IB1 = IB2 IC/IB = 10 VCE = 30 V 5000 TJ = 25C 3000 C, CAPACITANCE (pF) 2000 Cib Cib 2N5684 (PNP) 2N5686 (NPN) 0.2 Cob 1000 700 500 0.1 Cob 50 100 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn-Off Time Figure 7. Capacitance http://onsemi.com 3 2N5684 2N5686 PNP 2N5684 500 300 200 100 70 50 30 20 10 7.0 5.0 0.5 0.7 1.0 TJ = +150C +25 C VCE = 2.0 V VCE = 10 V 500 300 200 100 70 50 30 20 -55 C TJ = +150C +25 C VCE = 2.0 V VCE = 10 V NPN 2N5686 hFE , DC CURRENT GAIN -55 C 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 hFE , DC CURRENT GAIN 10 7.0 5.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 40 A 1.6 IC = 10 A 25 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C IC = 10 A 25 A 40 A 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0.1 0.2 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 5.0 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 5.0 10 Figure 9. Collector Saturation Region 2.5 TJ = 25C 2.0 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 1.5 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 1.0 0.8 0.5 0.4 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 4 2N5684 2N5686 PACKAGE DIMENSIONS CASE 197A-05 TO-204AE ISSUE J A N C E D U 2 2 PL -T- K M SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 0.30 (0.012) V H L G 1 TQ M Y M -Y- B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 2N5684 2N5686 Notes http://onsemi.com 6 2N5684 2N5686 Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 2N5684/D |
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